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Power Transistors
2SC5597
Silicon NPN triple diffusion mesa type
Unit: mm
For horizontal deflection output
(10.0) (6.0) (2.0) (4.0)
20.00.5 3.30.2
5.00.3 (3.0)
I Features
* High breakdown voltage, and high reliability through the use of a glass passivation layer * High-speed switching * Wide area of safe operation (ASO)
26.00.5
(3.0)
(1.5) 2.00.3 3.00.3 1.00.2 0.60.2 5.450.3 10.90.5 (1.5) 2.70.3 1 2 3
I Absolute Maximum Ratings TC = 25C
Parameter Collector to base voltage Collector to emitter voltage Symbol VCBO VCES VCEO Emitter to base voltage Peak collector current Collector current Base current Collector power dissipation TC = 25C Ta = 25C Tj Tstg VEBO ICP IC IB PC Rating 1 700 1 700 600 7 30 22 11 200 3.5 150 -55 to +150 C C Unit V V V V A A A W
20.00.5 (2.5) Solder Dip
(1.5)
1 : Base 2 : Collector 3 : Emitter TOP-3L Package
Marking Symbol: C5597 Internal Connection
C B E
Junction temperature Storage temperature
I Electrical Characteristics TC = 25C
Parameter Collector cutoff current Symbol ICBO IEBO hFE VCE(sat) VBE(sat) fT tstg tf Conditions VCB = 1 000 V, IE = 0 VCB = 1 700 V, IE = 0 Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Storage time Fall time VEB = 7 V, IC = 0 VCE = 5 V, IC = 11 A IC = 11 A, IB = 2.75 A IC = 11 A, IB = 2.75 A VCE = 10 V, IC = 0.1 A, f = 0.5 MHz IC = 11 A, Resistance loaded IB1 = 2.75 A, IB2 = -5.5 A 3 3.0 0.2 6 Min Typ Max 50 1 50 12 3 1.5 V V MHz s s Unit A mA A
(2.0)
1
2SC5597
PC T a
250
Power Transistors
Area of safe operation (ASO)
100 ICP 10 IC
DC
Area of safe operation, horizontal operation ASO
35 f=64kHz, TC<90C Area of safe operation for the single pulse load curve due to discharge in the highvoltage rectifier tube during horizontal operation.
Collector power dissipation PC (W)
Collector current IC (A)
Collector current IC (A)
200
(1) TC=Ta (2) With a 100 x 100 x 2mm3 Al heat sink (3) Without heat sink
t=100s 1ms 10ms
30
25
(1) 150
1
20
100
0.1
15
10
50 PC=12W (2) 0 0 25 50 75 100 125 150 PC=3.5W (3)
0.01 5 Non repetitive pulse TC=25C 1 3 10 30 100 300 1000 <1mA 0 500 1000 1500 2000
0.001
0
Ambient temperature Ta (C)
Collector to emitter voltage VCE (V)
Collector to emitter voltage VCE (V)
2
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2001 MAR

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